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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDY57 BDY58 DESCRIPTION With TO-3 package High current capability Fast switching speed APPLICATIONS For use in low frequency large signal power amplifications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO Collector-base voltage PARAMETER CONDITIONS BDY57 Open emitter VCEO VEBO IC IB PT Tj Tstg HAN INC Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature SEM GE BDY58 BDY57 Open base BDY58 TC=25ae DUC ICON VALUE 120 TOR UNIT V 160 80 V 125 10 25 6 175 V A A W ae ae Open collector 200 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.0 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BDY57 VCEO(SUS) Collector-emitter sustaining voltage BDY58 BDY57 V(BR)CBO Collector-emitter breakdown voltage BDY58 VCEsat VBEsat ICBO ICER IEBO hFE-1 hFE-2 fT ton Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current IC=10A ;IB=1A IC=10A ;IB=1A VCB=100V; IE=0 VCE=80V; RBE=10| VEB=10V; IC=0 ;TC=100ae IC=5mA ; IE=0 IC=0.1A ; IB=0 CONDITIONS BDY57 BDY58 SYMBOL MIN 80 TYP. MAX UNIT V 125 120 V 160 1.4 1.4 0.5 V V mA mA mA IN Emitter cut-off current DC current gain DC current gain Transition frequency Turn-on time ANG CH EMIC ES IC=10A ; VCE=4V IC=20A ; VCE=4V IC=15A ;IB=1.5A OND TOR UC 10 0.5 60 15 20 IC=1A ; VCE=15V,f=10MHz 10 1.0 MHz |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BDY57 BDY58 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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